MX29F022 Datasheet | Macronix

FEATURES - 262,144x 8 only - Fast access time: 55/70/90/120ns - Low power consumption -30m A maximum active current -1u A typical standby current@5MHz Programming and erasing voltage 5V±10% mand register architecture -Byte Programming (7us typical) -Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3) Auto Erase (chip & sector) and Auto Program -Automatically erase any bination of sectors or the whole chip with Erase Suspend capability. -Automatically programs and verifies data atspecified address Erase Suspend/Erase Resume -Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. - Status Reply - - - - -Data polling & Toggle bit for detection of program and erase cycle pletion. Chip protect/unprotect for 5V only system or 5V/12V system 100,000 minimum erase/program cycles Latch-up protected to 100m A from -1 to VCC+1V Boot Code Sector Architecture -T = Top Boot Sector -B = Bottom Boot Sector Hardware RESET pin -Resets internal state machine to read mode Low VCC write inhibit is equal to or less than 3.2V Package type: -32-pin PDIP -32-pin PLCC -32-pin TSOP (Type 1) 20 years data retention - - - - - - - - GENERAL DESCRIPTION The MX29F022T/B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits only. MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory.The MX29F022T/B is packaged in 32-pin PDIP, PLCC and 32-pin TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29F022T/B offers access time as fast as 55ns, allowing operation of high-speed microproc essors without wait states. To eliminate bus contention, the MX29F022T/B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F022T/B uses a mand register to manage this...