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MX28F2100B - 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY

Description

The MX28F2100B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits or 128K words of 16 bits switchable.

MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory.

The MX28F2100B is packaged in 44-pin SOP and 48-pin TSOP(I).

Features

  • 262,144x8/131,072x16 switchable.
  • Fast access time: 70/90/120ns.
  • Low power consumption.
  • 50mA maximum active current.
  • 100uA maximum standby current.
  • Programming and erasing voltage 12V ± 7%.
  • Command register architecture.
  • Byte/Word Programming (50 us typical).
  • Auto chip erase 5 sec typical (including preprogramming time).
  • Block Erase (Any one from 5 blocks:16K-Byte x1, 8K-Byte x2, 96K-Byte x1, and 128K-Byte.

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Datasheet preview – MX28F2100B

Datasheet Details

Part number MX28F2100B
Manufacturer Macronix
File Size 283.94 KB
Description 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Datasheet download datasheet MX28F2100B Datasheet
Additional preview pages of the MX28F2100B datasheet.

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Full PDF Text Transcription

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PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7% • Command register architecture – Byte/Word Programming (50 us typical) – Auto chip erase 5 sec typical (including preprogramming time) – Block Erase (Any one from 5 blocks:16K-Byte x1, 8K-Byte x2, 96K-Byte x1, and 128K-Byte x1) – Auto Erase with Erase Suspend capability • Status Register feature for Device status detection • Auto Erase (chip & block) and Auto Program – Status Registers • 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Package type: – 44-pin SOP – 48-pin TSOP (Type 1
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