MX29F1611 Datasheet 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

Manufacturer: Macronix

Datasheet Details

Part number	MX29F1611
Manufacturer	Macronix
File Size	166.66 KB
Description	16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Download	MX29F1611 Download (PDF)

The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8.

The MX29F1611 includes 16-128KB(131,072 Bytes) blocks or 16-64KW(65,536 Words)blocks.

MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory and fast page mode access.

INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH.

5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2.
Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 150ms typical.
Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip w.

Part Number	Description
MX29F1610A	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1615	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F100B	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100T	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F040	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040C	4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
MX29F200B	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CB	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CT	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200T	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY