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Macronix International
Macronix International

MX29LA128MT Datasheet Preview

MX29LA128MT Datasheet

128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY

No Preview Available !

MX29LA128MT pdf
PRELIMINARY
MX29LA128M T/B
FEATURES
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Configuration
- 16,777,216 x 8 / 8,388,608 x 16 switchable
• Sector structure
www.DataSheet4U-.c8oKmB(4KW) x 8 and 64KB(32KW) x 255
• Latch-up protected to 250mA from -1V to VCC + 1V
• Low VCC write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
• High Performance
- Fast access time: 90R/100ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer: reduces programming
time for multiple-word/byte updates
• Low Power Consumption
- Active read current: 18mA(typ.)
- Active write current: 20mA(typ.)
- Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-years data retention
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Program Suspend/Program Resume
- Suspend program operation to read other sectors
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data/pro-
gram other sectors
128M-BIT SINGLE VOLTAGE 3V ONLY
BOOT SECTOR FLASH MEMORY
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of all
sectors, regardless of sector protection settings
- ACC (high voltage) accelerates programming time
for higher throughput during system
SECURITY
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Sector Permanent Lock
- A unique lock bit feature allows the content to be
permanently locked
(Please contact Macronix sales for specific infor-
mation regarding this permanent lock feature)
• Secured Silicon Sector
- Provides a 128-word OTP area for permanent, se-
cure identification
- Can be programmed and locked at factory or by cus-
tomer
PACKAGE
• 56-pin TSOP
GENERAL DESCRIPTION
The MX29LA128M T/B is a 128-mega bit Flash memory
organized as 16M bytes of 8 bits or 8M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LA128M T/B is packaged in 56-pin TSOP. It is
designed to be reprogrammed and erased in system or in
standard EPROM programmers.
The standard MX29LA128M T/B offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LA128M T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
P/N:PM1170
REV. 0.04, JUL. 11, 2005
1



Macronix International
Macronix International

MX29LA128MT Datasheet Preview

MX29LA128MT Datasheet

128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY

No Preview Available !

MX29LA128MT pdf
MX29LA128M T/B
with in-circuit electrical erasure and programming. The
MX29LA128M T/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
www.DataSheetf4oUr.ecoramse and programming operations produces reliable
cycling. The MX29LA128M T/B uses a 2.7V to 3.6V
VCC supply to perform the High Reliability Erase and
auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
AUTOMATIC PROGRAMMING
The MX29LA128M T/B is byte/word/page programmable
using the Automatic Programming algorithm. The Auto-
matic Programming algorithm makes the external sys-
tem do not need to have time out sequence nor to verify
the data programmed.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to DATA# polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm. The
Automatic Erase algorithm automatically programs the
entire array prior to electrical erase. The timing and veri-
fication of electrical erase are controlled internally within
the device.
AUTOMATIC SECTOR ERASE
The MX29LA128MT/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically programs
the specified sector(s) prior to electrical erase. The tim-
ing and verification of electrical erase are controlled inter-
nally within the device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29LA128M T/B
electrically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
P/N:PM1170
REV. 0.04, JUL. 11, 2005
2


Part Number MX29LA128MT
Description 128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY
Maker Macronix International
Total Page 30 Pages
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