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MX29LV401T - (MX29LV401B/T) 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Download the MX29LV401T datasheet PDF. This datasheet also covers the MX29LV401B variant, as both devices belong to the same (mx29lv401b/t) 4m-bit [512k x 8 / 256k x 16] cmos single voltage 3v only flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The MX29LV401T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29LV401T/B is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP.

Features

  • Extended single - supply voltage range 2.7V to 3.6V.
  • 524,288 x 8/262,144 x 16 switchable.
  • Single power supply operation - 3.0V only operation for read, erase and program operation.
  • Fast access time: 55R/70/90ns.
  • Low power consumption - 20mA maximum active current - 0.2uA typical standby current.
  • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, an.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX29LV401B_MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX29LV401T
Manufacturer Macronix
File Size 795.00 KB
Description (MX29LV401B/T) 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Datasheet download datasheet MX29LV401T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ADVANCED INFORMATION MX29LV401T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns • Low power consumption - 20mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.
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