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MDC0531E Datasheet Preview

MDC0531E Datasheet

Common-Drain N-Channel Trench MOSFET

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MDC0531E
Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20m
General Description
The MDC0531E uses advanced MagnaChips MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent reliability. Low
RDS(ON) and low gate charge operation with gate voltage
as low as 2.5V
Features
VDS = 30V
ID = 8.0A @VGS = 10V
RDS(ON)
< 20mΩ @VGS = 10V
< 23mΩ @VGS = 4.5V
Applications
Unidirectional or Bi-directional Load Switch
Lithium-Ion Battery Packs
Portable Battery Protection Module
1(D1)
2(S1)
3(S1)
4(G1)
8(D2)
7(S2)
6(S2)
5(G2)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Junction and Storage Temperature Range
G1
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case
December. 2008. Version 1.1
1
D1 D2
G2
S1
S2
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
Rating
30
±12
8
6.5
45
1.7
1.0
-55~150
Unit
V
V
A
A
A
W
oC
Symbol
RθJA
RθJC
Rating
75
6
Unit
oC/W
MagnaChip Semiconductor Ltd.
http://www.Datasheet4U.com




MagnaChip

MDC0531E Datasheet Preview

MDC0531E Datasheet

Common-Drain N-Channel Trench MOSFET

No Preview Available !

Ordering Information
Part Number
MDC0531ET
MDC0531ER
Temp. Range
-55~150oC
-55~150oC
Package
TSSOP-8
TSSOP-8
Packing
Tube
Tape & Reel
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward
Voltage
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
VSD
VSD
trr
Qrr
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = 10V, ID = 5.0A
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 3.0A
VDS = 5V, ID = 7A
VDS = 15V, ID = 5A,
VGS = 4.5V
VDS = 15V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 15V, RL = 1.25Ω,
RG = 3Ω
IS = 1A, VGS = 0V
IS = 4.5A, VGS = 0V
IF = 11.6A, dl/dt = 100A/μs
Min Typ Max Unit
30 -
0.6 0.85
-
1.5
V
- - 1 μA
- - 10 μA
17 20
- 19 23
- 24 -
- 33 - S
- 10.7
- 2.1
- 4.3
- 870
- 105
- 115
- 3.5
- 11
- 27
- 6.5
nC
pF
ns
0.5 0.71
0.9
V
- 1.0 V
- 24
ns
- 13
nC
December. 2008. Version 1.1
2 MagnaChip Semiconductor Ltd.


Part Number MDC0531E
Description Common-Drain N-Channel Trench MOSFET
Maker MagnaChip
Total Page 7 Pages
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