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MDD4N20Y - N-Channel MOSFET

General Description

The MDD4N20Y uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 200V.
  • ID = 3.0A.
  • RDS(ON) ≤ 1.35Ω.

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Datasheet Details

Part number MDD4N20Y
Manufacturer MagnaChip
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet MDD4N20Y Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD4N20Y N-channel MOSFET 200V MDD4N20Y N-Channel MOSFET 200V, 3.0A, 1.35Ω General Description The MDD4N20Y uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 200V  ID = 3.0A  RDS(ON) ≤ 1.