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MDF10N60B Datasheet Preview

MDF10N60B Datasheet

N-Channel MOSFET

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MDF10N60B
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 10A
RDS(ON) ≤ 0.7Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derateabove 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jan. 2012 Version1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
10*
6.3*
40*
48
0.38
15.6
4.5
520
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.6
Unit
oC/W
MagnaChip Semiconductor Ltd.




MagnaChip

MDF10N60B Datasheet Preview

MDF10N60B Datasheet

N-Channel MOSFET

No Preview Available !

Ordering Information
Part Number
MDF10N60BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
Min
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 5.0A
VDS = 30V, ID = 5.0A
600
2.0
-
-
-
-
VDS = 480V, ID = 10A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 10A,
RG = 25Ω(3)
-
-
-
-
-
-
-
-
-
-
IS = 10A, VGS = 0V
IF = 10A, dl/dt = 100A/µs(3)
-
-
-
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 10A, di/dt200A/us, VDDBVDSS, Rg =25Ω, Starting TJ=25°C
4. L=9.6mH, IAS=10.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Typ Max
--
- 4.0
-1
- 100
0.58 0.7
9-
26.6
5.7
8.9
1409
3.9
153
23
36
117
39
-
-
-
-
-
-
-
-
-
-
10 -
- 1.4
340 -
3.3 -
Unit
V
µA
nA
S
nC
pF
ns
A
V
ns
µC
Jan. 2012 Version1.0
2 MagnaChip Semiconductor Ltd.


Part Number MDF10N60B
Description N-Channel MOSFET
Maker MagnaChip
Total Page 6 Pages
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