Description
The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V
ID = 97A @VGS = 10V
RDS(ON)
< 8.4 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
GDS
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current
TC=25oC TC=100oC
Power Dissipation Single Pulse Avalanche Energy
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance,.
MDP1922-MagnaChip.pdf
