Description
The MDP1923 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V
ID = 69A @VGS = 10V
RDS(ON)
< 13.9 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current
TC=25oC TC=100oC
Power Dissipation Single Pulse Avalanche Energy
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Jun.
MDP1923-MagnaChip.pdf
