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MDP7N60 Datasheet Preview

MDP7N60 Datasheet

N-Channel MOSFET

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MDP7N60
N-Channel MOSFET 600V, 7A, 1.15
General Description
The MDP7N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDP7N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 7.0A
RDS(ON) ≤ 1.15Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
7.0
4.4
28
131
1.05
13.1
4.5
220
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov. 2009 Version 2.1
1
Symbol
RθJA
RθJC
Rating
62.5
0.95
Unit
oC/W
MagnaChip Semiconductor Ltd.




MagnaChip

MDP7N60 Datasheet Preview

MDP7N60 Datasheet

N-Channel MOSFET

No Preview Available !

Ordering Information
Part Number
MDP7N60TH
Temp. Range
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.5A
VDS = 30V, ID = 3.5A
VDS = 480V, ID = 7.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 7.0A,
RG = 25Ω(3)
IS = 7.0A, VGS = 0V
IF = 7.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 7.0A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
600 -
3.0 -
-
V
5.0
- - 1 µA
- - 100 nA
1.0 1.15 Ω
- 8.5 - S
- 17.8 -
- 4.9 - nC
- 7.3 -
- 750
-5
pF
- 95
- 22
- 36
- 35
ns
- 25
- 7.0 - A
- 1.4 V
- 345
ns
- 3.2
µC
Nov. 2009 Version 2.1
2 MagnaChip Semiconductor Ltd.


Part Number MDP7N60
Description N-Channel MOSFET
Maker MagnaChip
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MDP7N60 Datasheet PDF






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