MDS3651 - Single P-Channel Trench MOSFET

MagnaChip

General Description

The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Key Features

 VDS = -30V  ID = -6.0A @ VGS = -10V  RDS(ON).

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MDS3651 single p-channel trench mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDS3651
Manufacturer	MagnaChip
File Size	812.24 KB
Description	Single P-Channel Trench MOSFET
Datasheet	MDS3651 Datasheet

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Other Datasheets by MagnaChip

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MDS3652	Single P-Channel Trench MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ General Description The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features  VDS = -30V  ID = -6.0A @ VGS = -10V  RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.