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MDS3652 - Single P-Channel Trench MOSFET

General Description

The MDS3652 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Key Features

  •  VDS = -30V  ID = -11A @VGS = -10V  RDS(ON) < 17mΩ @VGS = -10V < 27mΩ @VGS = -4.5V.

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Datasheet Details

Part number MDS3652
Manufacturer MagnaChip
File Size 1.06 MB
Description Single P-Channel Trench MOSFET
Datasheet download datasheet MDS3652 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS3652– Single P-Channel Trench MOSFET MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ General Description The MDS3652 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features  VDS = -30V  ID = -11A @VGS = -10V  RDS(ON) < 17mΩ @VGS = -10V < 27mΩ @VGS = -4.