Description
The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
D
D
D
D
D
D
D
D
D
S
S
S
G
G
S
S
S
G
PowerDFN56
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage TC=25 C Continuous Drain Current (1) TC=70 C TA=25 C TA=70oC Pulsed Drain Current TC=25 C TC=70 C Power Dissipation TA=25 C TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS TJ, Tstg
o o o o.