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MDWC0152ERH - Dual N-channel MOSFET

General Description

The MDWC0152ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability.

Excellent low RSS(ON), low gate charge operation and operation for Battery Application.

Key Features

  • - VSS = 12V - Source-Source ON Resistance; RSS(ON) typ. 4.0mΩ @ VGS = 4.5V RSS(ON) typ. 4.3mΩ @ VGS = 3.8V RSS(ON) typ. 4.8mΩ @ VGS = 3.1V RSS(ON) typ. 5.9mΩ @ VGS = 2.5V.

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Datasheet Details

Part number MDWC0152ERH
Manufacturer MagnaChip
File Size 560.54 KB
Description Dual N-channel MOSFET
Datasheet download datasheet MDWC0152ERH Datasheet

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Other Datasheets by MagnaChip

Part Number Description
MDWC0151ERH Common-Drain Dual N-Channel Trench MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDWC0152ERH– Common-Drain Dual N-Channel Trench MOSFET 12V MDWC0152ERH Common-Drain Dual N-Channel Trench MOSFET 12V, 15A, 5.1mΩ General Description The MDWC0152ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 12V - Source-Source ON Resistance; RSS(ON) typ. 4.0mΩ @ VGS = 4.5V RSS(ON) typ. 4.3mΩ @ VGS = 3.8V RSS(ON) typ. 4.8mΩ @ VGS = 3.1V RSS(ON) typ. 5.9mΩ @ VGS = 2.5V Applications - Portable Battery Protection Bottom View 2.14mm*1.