MDZ1N60 mosfet equivalent, n-channel trench mosfet.
* VDS = 600V
* ID = 0.4A
* RDS(ON) ≤ 8.5Ω
@VGS = 10V @VGS = 10V
Applications
* Power supply
* Battery charger
* Ballast
TO-92
GDS
Absolute Ma.
Features
* VDS = 600V
* ID = 0.4A
* RDS(ON) ≤ 8.5Ω
@VGS = 10V @VGS = 10V
Applications
* Power supply.
The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications..
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