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MMUB65R090R Datasheet
MMUB65R090RU(P)RH
650V 0.09Ω N-channel MOSFET
Description
MMUB65R090R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.
Key Parameters
Package & Internal Circuit
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Features
Value 700 0.090 3.0 35 78.