MMUB65R115RURH - N-channel MOSFET

MagnaChip

General Description

MMUB65R115RU(P) is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Key Features

Low Power Loss by High Speed Switching and Low On-Resistance.
Excellent ESD robustness.
100% Avalanche Tested.
Green Package.
Pb Free Plating, Halogen Free.

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MMUB65R115RURH n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMUB65R115RURH
Manufacturer	MagnaChip
File Size	739.30 KB
Description	N-channel MOSFET
Datasheet	MMUB65R115RURH Datasheet

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Other Datasheets by MagnaChip

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMUB65R115R Datasheet MMUB65R115RU(P)RH 650V 0.115Ω N-channel MOSFET  Description MMUB65R115RU(P) is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 700 0.115 3.0 30 64.