900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MagnaChip Semiconductor

MDD1752 Datasheet Preview

MDD1752 Datasheet

N-Channel Trench MOSFET

No Preview Available !

MDD1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
The MDD1752 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-
state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
Features
VDS = 40V
ID = 50A @VGS = 10V
RDS(ON)
< 8.0@ VGS = 10V
< 10.5mΩ@ VGS = 4.5V
Applications
Inverters
General purpose applications
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
TC=25oC
TA=25oC
(a)
(b)
TC=25oC
TA=25oC
(Note 3)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
40
±20
50
15.2
100
45
3.1
153
-55~+150
Rating
40
2.8
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
Jun. 2015. Version 1.3
1 MagnaChip Semiconductor Ltd.




MagnaChip Semiconductor

MDD1752 Datasheet Preview

MDD1752 Datasheet

N-Channel Trench MOSFET

No Preview Available !

Ordering Information
Part Number
MDD1752RH
Temp. Range
-55~150oC
Package
TO-252
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VDS = 5V, ID = 14A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VDS = 20V, ID = 14A, VGS = 10V
VDS = 20V, VGS = 0V, f = 1.0MHz
VGS = 10V ,VDS = 20V, ID = 1A ,
RGEN = 6Ω
VSD IS = 14A, VGS = 0V
trr IF = 14A, di/dt = 100A/μs
Qrr
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA
3. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V
Min Typ Max Unit
40 -
-
1.0 1.7 3.0
V
- -1
μA
- - 0.1
- 6.1 8.0
- 8.2 10.5
- 58 - S
- 26.4 -
- 3.6 -
- 6.8 -
- 1480 -
- 113 -
- 243 -
-9-
- 21 -
- 31 -
- 18 -
nC
pF
ns
-
0.8 1.2
V
- 26 - ns
- 11 - nC
Jun. 2015. Version 1.3
2 MagnaChip Semiconductor Ltd.


Part Number MDD1752
Description N-Channel Trench MOSFET
Maker MagnaChip Semiconductor
PDF Download

MDD1752 Datasheet PDF






Similar Datasheet

1 MDD1752 N-Channel Trench MOSFET
MagnaChip Semiconductor
2 MDD1754 N-channel Trench MOSFET
MagnaChip





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy