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MSB120N08G Datasheet 80V N-Channel MOSFET

Manufacturer: Maple Semiconductor

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Datasheet Details

Part number MSB120N08G
Manufacturer Maple Semiconductor
File Size 758.38 KB
Description 80V N-Channel MOSFET
Download MSB120N08G Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced technology.

which provides high performance in on-state resistance, fast switching performance and excellent quality.

MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications.

Overview

MSB120N08G / MSI120N08G MSB120N08G/MSI120N08G 80V N-Channel MOSFET General.

Key Features

  • - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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