SLB7N80C Datasheet | Maple Semiconductor

SLB7N80C / SLI7N80C SLB7N80C/SLI7N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. Features - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D2-PAK I2-PAK...