SLB7N80C Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management...
SLB7N80C Key Features
- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V
- Low gate charge ( typical 40nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability