SLD5N65S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLD5N65S
Manufacturer	Maple Semiconductor
File Size	464.47 KB
Description	N-Channel MOSFET
Datasheet	SLD5N65S Datasheet
Additional preview pages of the SLD5N65S datasheet.

SLD5N65S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD5N65S / SLU5N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.

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Published: Dec 28, 2018 |