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SLD5N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLD5N65S Features

* - 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD5N65S / SLU5N65S VDSS

SLD5N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD5N65S Datasheet (464.47 KB)

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Datasheet Details

Part number:

SLD5N65S

Manufacturer:

Maple Semiconductor

File Size:

464.47 KB

Description:

N-channel mosfet.

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SLD5N65S N-Channel MOSFET Maple Semiconductor

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