SLD840F Datasheet 500V N-Channel MOSFET

Manufacturer: Maple Semiconductor

SLD840F 500v n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	SLD840F
Manufacturer	Maple Semiconductor
File Size	363.20 KB
Description	500V N-Channel MOSFET
Download	SLD840F Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLD840F/ SLU840F SLD840F / SLU840F 500V N-Channel MOSFET General.

Key Features

- 8A, 500V, RDS(on) typ. = 0.7Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pu.

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