SLF10N60U Datasheet - Maple Semiconductor

N-Channel MOSFET

SLF10N60U Features

* - 10A, 600V, RDS(on) typ. = 0.68Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60U SLF10N60U VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF10N60U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF10N60U Datasheet (344.79 KB)

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SLF10N60U

Manufacturer:

Maple Semiconductor

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344.79 KB

Description:

N-channel mosfet.

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SLF10N60U N-Channel MOSFET Maple Semiconductor

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SLF10N60U Features

SLF10N60U General Description

Datasheet Details

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