SLF10N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLF10N65S Features

* - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N65S SLF10N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLF10N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF10N65S Datasheet (691.04 KB)

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SLF10N65S

Manufacturer:

Maple Semiconductor

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691.04 KB

Description:

N-channel mosfet.

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SLF10N65S N-Channel MOSFET Maple Semiconductor

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SLF10N65S Features

SLF10N65S General Description

Datasheet Details

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