SLH60R080SS mosfet equivalent, n-channel mosfet.
- 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
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This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-o.
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