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SLI14N50C Datasheet 500V N-Channel MOSFET

Manufacturer: Maple Semiconductor

Datasheet Details

Part number SLI14N50C
Manufacturer Maple Semiconductor
File Size 330.47 KB
Description 500V N-Channel MOSFET
Download SLI14N50C Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLB14N50C / SLI14N50C SLB14N50C / SLI14N50C 500V N-Channel MOSFET.

Key Features

  • - 13.5A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 46nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltag.