SLP5N65S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP5N65S
Manufacturer	Maple Semiconductor
File Size	537.92 KB
Description	N-Channel MOSFET
Datasheet	SLP5N65S Datasheet
Additional preview pages of the SLP5N65S datasheet.

SLP5N65S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220F TO-220 G GD S GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP5N65S SLF5N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) G.

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Published: Dec 28, 2018 |