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SLP65R500SJ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 10A, 650V, RDS(on) typ. = 0.45Ω@VGS = 10 V - Low gate charge ( typical 35nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche.

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Datasheet Details

Part number SLP65R500SJ
Manufacturer Maple Semiconductor
File Size 767.37 KB
Description N-Channel MOSFET
Datasheet download datasheet SLP65R500SJ Datasheet

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Full PDF Text Transcription

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SLP65R500SJ/SLF65R500SJ SLP65R500SJ/SLF65R500SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 10A, 650V, RDS(on) typ. = 0.
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