SLP65R950SJ Key Features
- 5A, 650V, RDS(on) typ. = 0.85Ω@VGS = 10 V
- Low gate charge ( typical 15nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: SLP65R950SJ
- Manufacturer: Maple Semiconductor
- Size: 1.14 MB
Related Maple Semiconductor Datasheets
| Part Number | Description |
|---|---|
| SLP65R190SJ | N-Channel MOSFET |
| SLP65R300SJ | N-Channel MOSFET |
| SLP65R420SJ | N-Channel MOSFET |
| SLP65R500SJ | N-Channel MOSFET |
| SLP65R700SJ | N-Channel MOSFET |
SLP65R950SJ Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.