SLP7N65S
SLP7N65S is N-Channel MOSFET manufactured by Maple Semiconductor.
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V
- Low gate charge ( typical 48n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220
TO-220F
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Symbol
Parameter
VDSS
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source...
