SLP8N65S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP8N65S
Manufacturer	Maple Semiconductor
File Size	495.66 KB
Description	N-Channel MOSFET
Datasheet	SLP8N65S Datasheet
Additional preview pages of the SLP8N65S datasheet.

SLP8N65S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 TO-220F G GDS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin.

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Published: Dec 28, 2018 |