N- Channel Enhancement Mode MOSFET
The MT2502 is the N-Ch annel logic enhancement m ode power field effect transistor are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devi ces a re p articularly suite d for low vo ltage appli cation su ch a s cellular p hone and noteb ook
computer power management and oth er Battery powered ci rcuits, and low in -line power loss a re needed in a
very small outline surface mount package.
¾ 100V/10A, RDS(ON) =150mΩ @ VGS = 10V
¾ 100V/10A, RDS(ON) =175mΩ @ VGS = 5V
¾ Super high density cell design for extremely
ultra low RDS(ON)
¾ Exceptional on-resistance and maximum DC
¾ TO-252 package design
¾ POWER Management
¾ Port able Equipment
¾ DC/ DC Converter
¾ Load Switch
- 1 - www.matrix-microtech.com.tw
Ver 1.00 10/21/2009