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Matrix Microtech

MT4600 Datasheet Preview

MT4600 Datasheet

P & N-Channel 100-V(D-S) MOSFET

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07
P & N-Channel 100-V(D-S) MOSFET
‹ DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device ideal for use in power management circuitry.
Typical applications are PWM DC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication power system, and telephones power
system.
‹ FEATURES
‹ APPLICATIONS
¾ 100V/9.8A, RDS(ON) = 155mȍ @ VGS = 10V
¾ -100V/-9A, RDS(ON) = 160mȍ @ VGS = -10V
¾ 100V/9.8A, RDS(ON) = 175mȍ @ VGS = 4.5V
¾ -100V/-9A, RDS(ON) = 185mȍ @ VGS = -4.5V
¾ Fast switching speed
¾ SOP-8 package design
¾ Power Management in Note
¾ Portable Equipment
¾ Battery Powered System
¾ Load Switch
¾ LCD Display inverter
‹ PIN CONFIGURATION
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- 1 - www.matrix-microtech.com.tw
Ver 1.02 2/11/2009




Matrix Microtech

MT4600 Datasheet Preview

MT4600 Datasheet

P & N-Channel 100-V(D-S) MOSFET

No Preview Available !

‹ ABSOLUTE MAXIMUM RATINGS
(TA=25 OC Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
TA=25 OC
TA=70OC
Power Dissipationa
TA=25 OC
TA=70OC
Operating Junction and Storage Temperature Range
LeadTemperature(1/16” from case for 10sec)
07
P & N-Channel 100-V(D-S) MOSFET
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
TL
N-Channel P-Channel
100 -100
20 20
9.8 -9
7 -6
37 -37
2.5
1.6
-55 to 150
275
Unit
V
V
A
A
W
OC
OC
‹ THERMAL RESISTANCE RATINGS
Thermal Resistance
Junction-to-Ambient
Junction-to-Case
Note :
a.
b.
Pulse width limited by maximum junction temperature.
Duty cycle ”1%
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‹ ORDERING INFORMATION
MT4600
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Device
Symbol
RșJA
RșJC
Package
SOP-8
Maximum
50
30
Unit
OC/W
OC/W
Shipping
2,500 Units/ Tape & Reel
- 2 - www.matrix-microtech.com.tw
Ver 1.02 2/11/2009


Part Number MT4600
Description P & N-Channel 100-V(D-S) MOSFET
Maker Matrix Microtech
Total Page 9 Pages
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