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ME15N10-G, ME15N10 N-Channel 100-V (D-S) MOSFET

ME15N10-G Description

N-Channel 100-V (D-S) MOSFET GENERAL .
ME15N10/ME15N10-G FEATURES. RDS(ON)≦100mΩ@VGS=10V. Super high density cell design for extremely low RDS(ON). Exceptional on-resistance.

ME15N10-G Features

* RDS(ON)≦100mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high

ME15N10-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME15N10 (Pb-free) ME15N10-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME15N10-G, ME15N10. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME15N10-G, ME15N10
Manufacturer
Matsuki
File Size
0.99 MB
Datasheet
ME15N10-Matsuki.pdf
Description
N-Channel 100-V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME15N10-G, ME15N10.
Please refer to the document for exact specifications by model.

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N-Channel 100-V D-S MOSFET Matsuki
Matsuki ME15N10-G-like datasheet