ME15N10-G Key Features
- RDS(ON)≦100mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Part: ME15N10-G
- Description: N-Channel 100-V (D-S) MOSFET
- Manufacturer: Matsuki
- Size: 0.99 MB
Other ME15N10-G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
ME15N10 | N-Channel MOSFET |