ME15N25 - N-Channel 250V (D-S) MOSFET

Matsuki

General Description

The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

RDS(ON)≦265mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME15N25 n-channel 250v (d-s) mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME15N25
Manufacturer	Matsuki
File Size	1.08 MB
Description	N-Channel 250V (D-S) MOSFET
Datasheet	ME15N25 Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME15N25-G	N-Channel 250V (D-S) MOSFET
ME15N25F	N-Channel 250V (D-S) MOSFET
ME15N25F-G	N-Channel 250V (D-S) MOSFET
ME15N10	N-Channel 100-V (D-S) MOSFET
ME15N10-G	N-Channel 100-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

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ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.