ME2301-G mosfet equivalent, p-channel enhancement mode mosfet.
* RDS(ON) ≦110mΩ@VGS=-4.5V
* RDS(ON) ≦150mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
APPLICATIONS
* Power Management in Note b.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
P.
The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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