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ME2301GC - P-Channel 20V (D-S) MOSFET

Description

The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦75mΩ@VGS=-4.5V.
  • RDS(ON) ≦95mΩ@VGS=-2.5V.
  • RDS(ON) ≦130mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME2301GC
Manufacturer Matsuki
File Size 884.19 KB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME2301GC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel 20V (D-S) MOSFET ME2301GC/ ME2301GC-G GENERAL DESCRIPTION The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦75mΩ@VGS=-4.5V ● RDS(ON) ≦95mΩ@VGS=-2.5V ● RDS(ON) ≦130mΩ@VGS=-1.
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