Datasheet Summary
P-Channel 20V (D-S) MOSFET
ME2301GC/ ME2301GC-G
GENERAL DESCRIPTION
The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
Features
- RDS(ON) ≦75mΩ@VGS=-4.5V
- RDS(ON) ≦95mΩ@VGS=-2.5V
- RDS(ON) ≦130mΩ@VGS=-1.8V
-...
