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ME2302D-G Datasheet N-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: ME2302D/ME2302D-G N-Channel 20V(D-S) MOSFET,ESD Protected GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

PIN CONFIGURATION

Key Features

  • RDS(ON)≦85mΩ@VGS=4.5V.
  • RDS(ON)≦115mΩ@VGS=2.5V.
  • RDS(ON)≦130mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME2302D N-Channel 20V (D-S) MOSFET
ME2302 N-Channel 20V (D-S) MOSFET
ME2302-G N-Channel 20V (D-S) MOSFET
ME2301 P-Channel Enhancement Mode Mosfet
ME2301-G P-Channel Enhancement Mode Mosfet
ME2301A P-Channel 20V (D-S) MOSFET
ME2301A-G P-Channel 20V (D-S) MOSFET
ME2301DC P-Channel 20V (D-S) MOSFET
ME2301DC-G P-Channel 20V (D-S) MOSFET
ME2301GC P-Channel 20V (D-S) MOSFET

ME2302D-G Distributor