ME2302D-G, ME2302D Datasheet - Matsuki

ME2302D-G N-Channel 20V (D-S) MOSFET

The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phon.

ME2302D-G Features

* RDS(ON)≦85mΩ@VGS=4.5V

* RDS(ON)≦115mΩ@VGS=2.5V

* RDS(ON)≦130mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Notebook

* Portable Equipment

* Load S

ME2302D-Matsuki.pdf

ME2302D-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2302D-G, ME2302D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2302D-G, ME2302D

Manufacturer:

Matsuki

File Size:

906.35 KB

Description:

N-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2302D-G, ME2302D.
Please refer to the document for exact specifications by model.

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ME2302D-G ME2302D N-Channel 20V D-S MOSFET Matsuki

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