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ME2306-G, ME2306 Datasheet - Matsuki

ME2306-G N-Channel Enhancement Mode Mosfet

The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho.

ME2306-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME2306-G, ME2306. Please refer to the document for exact specifications by model.
ME2306-G Datasheet Preview Page 2 ME2306-G Datasheet Preview Page 3

Datasheet Details

Part number:

ME2306-G, ME2306

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2306-G, ME2306.
Please refer to the document for exact specifications by model.

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TAGS

ME2306-G ME2306 N-Channel Enhancement Mode Mosfet Matsuki

ME2306-G Distributor