ME2306AS-G, ME2306AS Datasheet - Matsuki

ME2306AS-G N-Channel 30V (D-S) MOSFET

The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular pho.

ME2306AS-G Features

* RDS(ON)≦32mΩ@VGS=10V

* RDS(ON)≦38mΩ@VGS=4.5V

* RDS(ON)≦50mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery

ME2306AS-Matsuki.pdf (1.01 MB)

ME2306AS-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2306AS-G, ME2306AS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2306AS-G, ME2306AS

Manufacturer:

Matsuki

File Size:

1.01 MB

Description:

N-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2306AS-G, ME2306AS.
Please refer to the document for exact specifications by model.

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ME2306AS-G ME2306AS N-Channel 30V D-S MOSFET Matsuki

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