ME2306DS-G, ME2306DS Datasheet - Matsuki

ME2306DS-G N-Channel 30V (D-S) MOSFET

The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME2306DS-G Features

* RDS(ON)≦31mΩ@VGS=10V

* RDS(ON)≦52mΩ@VGS=4.5V

* ESD Protected

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Switch Ord

ME2306DS-Matsuki.pdf

ME2306DS-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2306DS-G, ME2306DS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2306DS-G, ME2306DS

Manufacturer:

Matsuki

File Size:

1.03 MB

Description:

N-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2306DS-G, ME2306DS.
Please refer to the document for exact specifications by model.

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ME2306DS-G ME2306DS N-Channel 30V D-S MOSFET Matsuki

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