ME2307-G Datasheet, Matsuki

* RDS(ON) ≦70mΩ@VGS=-10V
* RDS(ON) ≦95mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON) APPLICATIONS
* Power Management in Note book.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC O.

The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.