ME2307C-G, ME2307C Datasheet - Matsuki

ME2307C-G P-Channel 30V (D-S) MOSFET

The ME2307C is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME2307C-G Features

* RDS(ON) ≦70mΩ@VGS=-10V

* RDS(ON) ≦95mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON) APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (SOT-23) Top View Th Orderi

ME2307C-Matsuki.pdf (897.78 KB)

ME2307C-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2307C-G, ME2307C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2307C-G, ME2307C

Manufacturer:

Matsuki

File Size:

897.78 KB

Description:

P-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2307C-G, ME2307C.
Please refer to the document for exact specifications by model.

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ME2307C-G ME2307C P-Channel 30V D-S MOSFET Matsuki

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