ME2308D-G Datasheet, Matsuki

* RDS(ON)≦60mΩ@VGS=10V
* RDS(ON)≦70mΩ@VGS=4.5V
* RDS(ON)≦100mΩ@VGS=2.5V
* ESD Protection
* Super high density cell design for extremely low RDS(ON)

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC * The Ordering Information: ME.

The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.