ME2312-G Description
The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and...
ME2312-G Key Features
- RDS(ON)≦33mΩ@VGS=4.5V
- RDS(ON)≦40mΩ@VGS=2.5V
- RDS(ON)≦51mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2312-G Applications
- Power Management in Note book