ME2312-G, ME2312 Datasheet - Matsuki

ME2312-G N-Channel 20V (D-S) MOSFET

The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME2312-G Features

* RDS(ON)≦33mΩ@VGS=4.5V

* RDS(ON)≦40mΩ@VGS=2.5V

* RDS(ON)≦51mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Sw

ME2312-Matsuki.pdf

ME2312-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2312-G, ME2312. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2312-G, ME2312

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

N-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2312-G, ME2312.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME2312 N-Channel 20V (D-S) MOSFET (Matsuki)

ME2313 P-Channel 20V (D-S) MOSFET (Matsuki)

ME2313-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2317D-G P-Channel 30V (D-S) MOSFET (Matsuki)

ME2318-G N-Channel 20V (D-S) MOSFET (Matsuki)

ME2318S N-Channel 40V (D-S) MOSFET (Matsuki)

ME2318S-G N-Channel 40V (D-S) MOSFET (Matsuki)

ME2301 P-Channel Enhancement Mode Mosfet (Matsuki)

TAGS

ME2312-G ME2312 N-Channel 20V D-S MOSFET Matsuki

ME2312-G Distributor