ME2313-G, ME2313 Datasheet - Matsuki

ME2313-G P-Channel 20V (D-S) MOSFET

The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2313-G Features

* RDS(ON)≦48mΩ@VGS=-10V

* RDS(ON)≦52mΩ@VGS=-4.5V

* RDS(ON)≦65mΩ@VGS=-2.5V

* RDS(ON)≦85mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* P

ME2313-Matsuki.pdf (393.94 KB)

ME2313-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2313-G, ME2313. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2313-G, ME2313

Manufacturer:

Matsuki

File Size:

393.94 KB

Description:

P-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2313-G, ME2313.
Please refer to the document for exact specifications by model.

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ME2313-G ME2313 P-Channel 20V D-S MOSFET Matsuki

ME2313-G Distributor