ME2318S-G, ME2318S Datasheet - Matsuki

ME2318S-G N-Channel 40V (D-S) MOSFET

The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME2318S-G Features

* RDS(ON) ≦40mΩ@VGS=10V

* RDS(ON) ≦65mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* DC/DC Converter

* Load Switch

ME2318S-Matsuki.pdf

ME2318S-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2318S-G, ME2318S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2318S-G, ME2318S

Manufacturer:

Matsuki

File Size:

960.33 KB

Description:

N-channel 40v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2318S-G, ME2318S.
Please refer to the document for exact specifications by model.

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ME2318S-G ME2318S N-Channel 40V D-S MOSFET Matsuki

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