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ME2325-G Datasheet P-Channel 30V (D-S) MOSFET

Manufacturer: Matsuki

Download the ME2325-G datasheet PDF. This datasheet also includes the ME2325 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ME2325-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2325-G
Manufacturer Matsuki
File Size 1.05 MB
Description P-Channel 30V (D-S) MOSFET
Download ME2325-G Download (PDF)

General Description

The ME2325 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Overview

P-Channel 30V (D-S) MOSFET MOSFET GENERAL.

Key Features

  • RDS(ON)≦50mΩ@VGS=-10V.
  • RDS(ON)≦76mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.