ME2514-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦166mΩ@VGS=10V
* RDS(ON)≦213mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* DC/DC Converter
* Load Switch
PIN CONFIGURATION
(SOT-89) Top View
* The Ordering Information: ME2514 (Pb-fre.
The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.
Image gallery
Download